Point defect movement and annealing in collision cascades

被引:169
作者
Nordlund, K [1 ]
Averback, RS [1 ]
机构
[1] UNIV HELSINKI, ACCELERATOR LAB, FIN-00014 HELSINKI, FINLAND
关键词
D O I
10.1103/PhysRevB.56.2421
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of collision cascades on preexisting point defects in crystalline materials was studied by simulating 5 keV collision cascades in gold, copper, aluminum, platinum, and silicon. The results indicate that collision cascades do not significantly affect interstitials or vacancies outside the liquid core of the cascade, although in the fee metals the heating of the crystal due to the cascade causes some thermal migration of the interstitials. Within the liquid cascade core, both interstitials and Vacancies move towards the center of the molten region when it resolidifies and recombine or cluster there. At elevated temperatures, random jumps of interstitials during the thermal-spike phase can cause significant additional trapping of interstitials in the liquid. In contrast to the annealing effects of preexisting damage in the fee metals, in silicon the amount of new damage created by st cascade is roughly independent of the number of initial point defects. The difference is attributed to the nature of the bonding in the materials.
引用
收藏
页码:2421 / 2431
页数:11
相关论文
共 46 条
[1]  
Allen M. P, 1989, Computer Simulation of Liquids
[2]   MEV ION PROCESSING APPLICATIONS FOR INDUSTRY [J].
ASHER, J .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 89 (1-4) :315-321
[3]   ION-IRRADIATION STUDIES OF CASCADE DAMAGE IN METALS [J].
AVERBACK, RS .
JOURNAL OF NUCLEAR MATERIALS, 1982, 108 (1-2) :33-45
[4]   ATOMIC DISPLACEMENT PROCESSES IN IRRADIATED METALS [J].
AVERBACK, RS .
JOURNAL OF NUCLEAR MATERIALS, 1994, 216 :49-62
[5]   MOLECULAR-DYNAMICS COMPUTER-SIMULATIONS OF DISPLACEMENT CASCADES IN METALS [J].
BACON, DJ ;
DELARUBIA, TD .
JOURNAL OF NUCLEAR MATERIALS, 1994, 216 :275-290
[6]  
BACON DJ, 1995, NATO ASI SERIES E, V3, P189
[7]   DEFECTS PRODUCTION AND ANNEALING IN SELF-IMPLANTED SI [J].
BAI, G ;
NICOLET, MA .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) :649-655
[8]   COMPARATIVE-STUDY OF SILICON EMPIRICAL INTERATOMIC POTENTIALS [J].
BALAMANE, H ;
HALICIOGLU, T ;
TILLER, WA .
PHYSICAL REVIEW B, 1992, 46 (04) :2250-2279
[9]   MOLECULAR-DYNAMICS WITH COUPLING TO AN EXTERNAL BATH [J].
BERENDSEN, HJC ;
POSTMA, JPM ;
VANGUNSTEREN, WF ;
DINOLA, A ;
HAAK, JR .
JOURNAL OF CHEMICAL PHYSICS, 1984, 81 (08) :3684-3690
[10]  
CAR R, 1992, MATER SCI FORUM, V83, P433, DOI 10.4028/www.scientific.net/MSF.83-87.433