Growth, structure, optical and electrical properties of Si/2D Mg2Si/Si(111) double heterostructures and Schottky diodes on their base

被引：6

作者：

Galkin, Konstantin N. ^{[1
,2
]}

Galkin, Nikolay G. ^{[1
,2
]}

Dozsa, Laszlo ^{[3
]}

Dotsenko, Sergei A. ^{[1
,2
]}

Chernev, Igor M. ^{[1
]}

Vavanova, Svetlana V. ^{[1
]}

Dobos, Laszlo ^{[3
]}

Pecz, Bela ^{[3
]}

机构：

[1] Inst Automat & Control Proc FEB RAS, 5 Radio St, Vladivostok 690041, Russia

[2] Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, Russia

[3] Hungarian Acad Sci, Ctr Nat Sci, Inst Tech Phys & Mat Sci, POB 17, H-1525 Budapest, Hungary

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 12 | 2013年 / 10卷 / 12期

关键词：

magnesium silicide; heterostructures; properties; MG2SI;

D O I：

10.1002/pssc.201300366

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Mg2Si layers were grown on silicon by RDE at 150 degrees C and by SPE at 160 degrees C, and they were covered by silicon cap grown by MBE at 150-180 degrees C. The silicide layers and the silicon cap were investigated by in situ and ex situ methods. The 2D Mg2Si layer continuity and electrical properties were conserved during cap growth. The point defects in the structure are dominated by contamination of the substrate and by diffusion of the not reacted Mg into silicon. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1720 / 1723

页数：4

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