Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy

被引：1

作者：

Minj, Albert ^{[1
]}

Ben Ammar, Hichem ^{[1
]}

Cros, Ana ^{[2
]}

Garro, Nuria ^{[2
]}

Gamarra, Piero ^{[3
]}

Delage, Sylvain L. ^{[3
]}

Ruterana, Pierre ^{[1
]}

机构：

[1] ENSICAEN, CIMAP, UMR 6252, 6 Bd Marechal Juin, F-14050 Caen 4, France

[2] Univ Valencia, Inst Mat Sci ICMUV, POB 22085, E-46071 Valencia, Spain

[3] III V Lab, 1 Ave Augustin Fresnel,Campus Polytech, F-91767 Palaiseau, France

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2018年 / 255卷 / 05期

关键词：

III-nitride semiconductors; AlGaInN; defects; high electron mobility transistors; Kelvin probe force microscopy; surface photovoltage; THREADING DISLOCATIONS; 0001; SAPPHIRE; GAN; ORIGIN;

D O I：

10.1002/pssb.201700427

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, local electrical properties of the crystallographic defects including V-defects and trenches in ternary alloy AlGaN and quaternary alloys Al(Ga,In)N with different indium concentration are studied by light-assisted Kelvin probe force microscopy. This surface sensitive technique is used to reveal the role of these defects as deep level electron traps. The evolution of topography of the layers from AlGaN to indium-containing alloys is also investigated; it highlights the transformation of step-flow to three-dimensional growth mode. It is also shown that at the coalescence boundaries of growth hillocks, defects are generated which act as electrically active electron traps.

引用

页数：6

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