Logarithmic temperature dependence of resistivity in CVD graphene

被引：4

作者：

Takehana, Kanji ^{[1
]}

Imanaka, Yasutaka ^{[1
]}

Watanabe, Eiichiro ^{[1
]}

Oosato, Hirotaka ^{[1
]}

Tsuya, Daiju ^{[1
]}

Kim, Yongmin ^{[2
,3
]}

An, Ki-Seok ^{[4
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki, Japan

[2] Dankook Univ, Dept Appl Phys, Yongin, South Korea

[3] Dankook Univ, Inst Nanosci & Biotechnol, Yongin, South Korea

[4] Korea Res Inst Chem Technol, Device Mat Res Ctr, Daejeon, South Korea

来源：

CURRENT APPLIED PHYSICS | 2017年 / 17卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

CVD graphene; Magnetotransport property; Log T dependence of resistivity; CHEMICAL-VAPOR-DEPOSITION; DILUTE MAGNETIC-ALLOYS; TRANSPORT-COEFFICIENTS; RESISTANCE CORRECTION; GRAPHITE; DEFECTS; ORIGIN; SYSTEM; FIELD; MODEL;

D O I：

10.1016/j.cap.2017.01.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Logarithmical increase of the longitudinal resistivity (p(xx)) between 10 K and 80 K and its saturation at low temperature were observed in the graphene synthesized by the chemical vapor deposition (CVD) with various applied gate voltage. In the two-dimensional system, it is considerably difficult to identify the origin of the logarithmic temperature (Log-T) increase of the resistivity, because there are three corrections to exhibit the Log-T behavior: the weak localization, the electron-electron interaction (EEI) in the disordered system and the Kondo effect. In order to distinguish the origin of the Log-T behavior, we contrived a new method utilizing the magnetotransport property in tilted magnetic fields. As a result, we have assigned the Log-T behavior in the CVD graphene to the correction of the EEI. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：474 / 478

页数：5

共 35 条

[1] Dangling bonds and magnetism of grain boundaries in graphene [J].