Temperature dependence of exchange field and coercivity in polycrystalline NiO/NiFe film with thin antiferromagnetic layer: Role of antiferromagnet grain size distribution
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作者:
Khapikov, AF
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Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USAUniv Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA
Khapikov, AF
[1
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Harrell, JW
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Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USAUniv Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA
Harrell, JW
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]
Fujiwara, H
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Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USAUniv Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA
Fujiwara, H
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Hou, C
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Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USAUniv Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA
Hou, C
[1
]
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[1] Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA
The temperature dependence of the exchange bias H-eb and coercivity H-c, has been measured for a NiO(6.5 nm)/Ni81Fe19(12 nm) bilayer which demonstrated at room temperature zero exchange bias, but an enhanced coercivity (H-c=65 Oe). Upon cooling the sample in a magnetic field (H=300 Oe), the exchange bias remains zero down to T=250 K, whereas the coercivity increases roughly linearly with decreasing temperature. Below this critical temperature an exchange shift of the hysteresis loop occurs that is accompanied by a decrease in the coercivity. Decreasing the temperature further results in an increase in both H-eb and H-c. A thermal fluctuation model, where both fluctuating and stable AF grains contribute to the coercivity, with an additional assumption of increasing the density of NiO interfacial uncompensated spins at low temperature, predicts the correct temperature behavior of H-eb and H-c. (C) 2000 American Institute of Physics. [S0021-8979(00)36308-3].
机构:
Hitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, JapanHitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, Japan
Nishioka, K
Shigematsu, S
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Hitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, JapanHitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, Japan
Shigematsu, S
Imagawa, T
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Hitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, JapanHitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, Japan
Imagawa, T
Narishige, S
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Hitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, JapanHitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, Japan
机构:
Hitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, JapanHitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, Japan
Nishioka, K
Shigematsu, S
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Hitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, JapanHitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, Japan
Shigematsu, S
Imagawa, T
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Hitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, JapanHitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, Japan
Imagawa, T
Narishige, S
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机构:
Hitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, JapanHitachi Ltd, Data Storage & Retrieval Syst Div, Magnet Recording Res & Dev Dept, Kanagawa 265, Japan