Determination of carrier density of ZnO nanowires by electrochemical techniques

被引：255

作者：

Mora-Sero, Ivan ^{[1
]}

Fabregat-Santiago, Francisco

Denier, Benjamin

Bisquert, Juan

Tena-Zaera, Ramon

Elias, Jamil

Levy-Clement, Claude

机构：

[1] Univ Jaume 1, Dept Ciencias Expt, Castellon de La Plana 12071, Spain

[2] CNRS, Inst Sci Chim Seine Amont, LCMTR, F-94320 Thiais, France

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

关键词：

D O I：

10.1063/1.2390667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The carrier density of ZnO nanowires has been determined by means of electrochemical impedance spectroscopy. A model taking into account the geometry of ZnO nanowires has been developed and the differences with the standard flat model, as curved Mott-Schottky plots, are discussed. The as-grown electrodeposited samples present a high donor density of 6.2x10(19) cm(-3), dramatically reduced by two orders of magnitude after an annealing in air at 450 degrees C during 1 h. The results show that the surface of the ZnO nanowires is active; therefore this system appears as a useful structure to support a functionalized nanostructured devices. (c) 2006 American Institute of Physics.

引用

页数：3

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