Absorption dynamics of type-II GaSb/GaAs quantum dots

被引：10
|
作者：
Komolibus, K. [1 ,2 ]
Piwonski, T. [2 ]
Reyner, C. J. [3 ]
Liang, B. [3 ]
Huyet, G. [1 ,2 ,4 ]
Huffaker, D. L. [3 ]
Viktorov, E. A. [4 ,5 ]
Houlihan, J. [6 ]
机构：
[1] Cork Inst Technol, Ctr Adv Photon & Proc Anal, Cork, Ireland
[2] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
[3] Univ Calif Los Angeles, Calif NanoSyst Inst, Dept Elect Engn, Los Angeles, CA 90095 USA
[4] Natl Res Univ Informat Technol Mech & Opt, St Petersburg 199034, Russia
[5] Univ Libre Bruxelles, Opt Nonlineaire Theor, Campus Plaine,Code Postal 231, B-1050 Brussels, Belgium
[6] Waterford Inst Technol, Sch Sci, Waterford, Ireland
来源：
OPTICAL MATERIALS EXPRESS | 2017年 / 7卷 / 04期
关键词：
D O I：
10.1364/OME.7.001424
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper room temperature pump-probe spectroscopy is employed to study ultrafast absorption dynamics in type-II GaSb/GaAs quantum dots (QDs). Our results identify a strong 3-5 ps timescale which is reproduced using a rate equation model and thereby associated with hole recapture by the QD following higher order absorption of part of the pump pulse into barrier layers. The strength of the component is attributed to cancelling effects in the gain and phase dynamics as a result of the carrier dependence of emission frequency that is characteristic of type-II structures. (C) 2017 Optical Society of America
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收藏
页码：1424 / 1430
页数：7
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