p-type conduction in arsenic-doped ZnSe nanowires

被引：37
作者：
Song, H. S.
Zhang, W. J. [1 ]
Yuan, G. D.
He, Z. B.
Zhang, W. F.
Tang, Y. B.
Luo, L. B.
Lee, C. S.
Bello, I.
Lee, S. T.
机构：
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 03期
关键词：
annealing; arsenic; crystal orientation; crystal structure; electrical conductivity; field effect transistors; II-VI semiconductors; nanowires; semiconductor doping; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; SOLAR-CELLS; ARRAYS; NANOBELTS;
D O I：
10.1063/1.3186359
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Reliable p-type conduction was achieved in ZnSe nanowires (NWs) synthesized by introducing Zn3As2 as a dopant source. The crystal structure and orientation of NWs remained unchanged after doping. The electrical and transport properties of As-doped ZnSe NWs were investigated via the characteristics of NW-based field-effect transistors. The origin of p-type conduction in ZnSe NWs is attributed to the formation of substitutional As-Se and As-Zn-2V(Zn) complexes. Arsenic atoms were considered to incorporate into ZnSe lattices partly as As-H pairs; therefore postgrowth annealing could improve p-type conduction by dissociating As-H bonds and activating As acceptors.
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