SCR-Based ESD Protection Using a Penta-Well for 5 V Applications

被引：26
|
作者：
Song, Bo-Bae [1 ]
Do, Kyoung-Il [1 ]
Koo, Yong-Seo [1 ]
机构：
[1] Dankook Univ, Dept Elect & Elect Engn, Yongin 16890, South Korea
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2018年 / 6卷 / 01期
关键词：
Silicon controlled rectifier (SCR); penta-well; holding voltage; current driving capability; LATCHUP; DESIGN;
D O I：
10.1109/JEDS.2018.2817636
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper proposes a new structure of silicon controlled rectifier (SCR)-based ESD protection circuit using a penta-well for ESD protection in 5 V applications. The proposed circuit exhibits higher holding voltage and current-driving capability than low Ron SCR (LRSCR) ESD protection circuits. The existing LRSCR ESD protection circuit and the proposed ESD protection circuit were fabricated using the 0.18 mu m BCD process. The electrical and latch-up characteristics were compared and analyzed using transmission line pulse measurement and a transient-induced latch-up test.
引用
收藏
页码：691 / 695
页数：5
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