An integrated equivalent circuit model for relative intensity noise and frequency noise spectrum of a multimode semiconductor laser

被引:24
作者
Mortazy, E [1 ]
Ahmadi, V
Moravvej-Farshi, MK
机构
[1] Tarbiat Modares Univ, Dept Elect Engn, Tehran, Iran
[2] Iran Telecommun Res Ctr, Opt Commun Grp, Tehran, Iran
[3] Atom Energy Org Iran, Laser Res Ctr, Tehran, Iran
关键词
equivalent circuit model; frequency/phase noise spectrum (FNS); relative intensity noise (RIN); semiconductor laser;
D O I
10.1109/JQE.2002.802975
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Relative intensity noise (RIN) and the frequency/ phase noise spectrum (FNS) equivalent circuit of a multimode semiconductor laser diode are derived from multimode rate equations with the inclusion of noise Langevin sources. FNS is an important parameter in optical communication systems, and its circuit model is presented, for the first time, in this paper. Both circuit models for RIN and FNS are integrated in one circuit. RIN and FNS are calculated as functions of frequency, output power, and mode number. It is shown that the RIN of the main mode is increased in the multimode lasers with higher mode numbers. Furthermore, we show that RIN and FNS are enhanced for higher output power. The dependency of a multimode laser diode linewidth on output power is also analyzed using the model.
引用
收藏
页码:1366 / 1371
页数:6
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