Enhancement of Low Temperature Electron Mobility Due to an Electric Field in an InGaAs/InAlAs Double Quantum Well Structure

被引：0

作者：

Sahu, T. ^{[1
]}

Palo, S. ^{[2
]}

Nayak, P. K. ^{[3
]}

Sahood, N. ^{[4
]}

机构：

[1] Natl Inst Sci & Technol, Dept Elect & Commun Engn, Berhampur 761008, Odisha, India

[2] Kalam Inst Technol, Dept ECE, Berhampur, Odisha, India

[3] SMIT, Dept ECE, Berhampur, Odisha, India

[4] Berhampur Univ, Dept Elect Sci, Berhampur 760007, Orissa, India

来源：

SEMICONDUCTORS | 2014年 / 48卷 / 10期

关键词：

INTERFACE-ROUGHNESS; SCATTERING; TRANSPORT; STRAIN;

D O I：

10.1134/S1063782614100261

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of external electric field F on multisubband electron mobility mu in an In0.53Ga0.47As/In0.52Al48As double quantum well structure is analyzed. We consider scatterings due to ionized impurities, interface roughness and alloy disorder to analyze mu. The variation of scattering mechanisms as a function of F for different structure parameters shows interesting results through intersubband interactions. For small well widths, the mobility is governed by interface roughness scattering. When two subbands are occupied, the effect of impurity scattering gets enhanced through intersubband interactions. Our results of enhancement in mobility as a function of F, can be utilized for low temperature devices.

引用

页码：1318 / 1323

页数：6

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