Role of metal capping layer on highly enhanced electrical performance of In-free Si-Zn-Sn-O thin film transistor

被引：28

作者：

Choi, Jun Young ^{[1
]}

Kim, SangSig ^{[1
]}

Kim, Dae Hwan ^{[2
]}

Lee, Sang Yeol ^{[3
]}

机构：

[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

[2] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea

[3] Cheongju Univ, Dept Semicond Engn, Cheongju 360764, South Korea

来源：

THIN SOLID FILMS | 2015年 / 594卷

基金：

新加坡国家研究基金会;

关键词：

Oxide; Thin film transistor; Metal capping; Silicon zinc tin oxide; TRANSPARENT; TRANSPORT;

D O I：

10.1016/j.tsf.2015.04.048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Metal capping (MC) layer for Si-Zn-Sn-O thin film of the back channel layer of thin film transistors is proposed to protect from ambient effect and to improve electrical properties. Field effect mobility is improved from 34.46 cm(2)/V s to 147.59 cm(2)/V s and excellent stability of V-th similar to 0.6 V is obtained. The floating MC-layer forms a strongly compact-shape current-path as a result of the effective control of the surface potential by the low-resistance of MC-layer. In addition, the proposed device structure effectively prevents the adsorption/desorption reaction of ambient oxygen and water molecules on the surface. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：293 / 298

页数：6

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