Room temperature anomalous Hall effect in antiferromagnetic Mn3SnN films

被引：24

作者：

You, Yunfeng ^{[1
]}

Bai, Hua ^{[1
]}

Chen, Xianzhe ^{[1
]}

Zhou, Yongjian ^{[1
]}

Zhou, Xiaofeng ^{[1
]}

Pan, Feng ^{[1
]}

Song, Cheng ^{[1
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2020年 / 117卷 / 22期

基金：

中国国家自然科学基金;

关键词：

NONCOLLINEAR ANTIFERROMAGNET; FERMIONS;

D O I：

10.1063/5.0032106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rich magnetic phase transition makes the antiperovskite manganese nitride Mn(3)AN family an ideal platform to explore the anomalous Hall effect (AHE) with different magnetic configurations. Here, we report the observation of AHE signals up to room temperature in antiferromagnetic (AFM) (001)-oriented Mn3SnN thin films. AHE signals, originated from the Berry curvature, can be controlled by the growth-induced biaxial strain, which leads to the modulation of noncollinear AFM configurations. A relatively large biaxial strain could enhance AHE signals ascribed to the canted AFM structure induced by the piezomagnetic effect. Our findings advance the effective utilization of the AHE in AFM spintronics.

引用

页数：6

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