Nonvolatile memory device based on the switching by the all-organic charge transfer complex

The authors have investigated the nonvolatile memory device by the amorphous charge transfer complex of 2, 4, 7-trinitro-9-fluorenone and poly(N-vinylcarbazole) as a spin-coated active layer. The reversible switching can be controlled by the external electric field and the on/off ratio is more than three orders at 1 V. The device operation might be interpreted as the generation and the extinction of charged carriers in the active layer through the results of the capacitance and the impedance at each state. (c) 2006 American Institute of Physics.