Raman spectroscopy of GaP/GaNP core/shell nanowires

被引：15
作者：
Dobrovolsky, A. [1 ]
Sukrittanon, S. [2 ]
Kuang, Y. J. [3 ]
Tu, C. W. [4 ]
Chen, W. M. [1 ]
Buyanova, I. A. [1 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden
[2] Grad Program Mat Sci & Engn, La Jolla, CA 92093 USA
[3] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[4] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 19期
基金：
瑞典研究理事会; 美国国家科学基金会;
关键词：
BAND-GAP; STRUCTURAL-PROPERTIES; PHOTOLUMINESCENCE; POLARIZATION; ALLOYS;
D O I：
10.1063/1.4901446
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm(-1) that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio. (C) 2014 AIP Publishing LLC.
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页数：5
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