Trapping High-Pressure Nanophase of Ge upon Laser Ablation in Liquid

被引：32

作者：

Liu, P. ^{[1
]}

Cao, Y. L. ^{[1
]}

Chen, X. Y. ^{[1
]}

Yang, G. W. ^{[1
]}

机构：

[1] Zhongshan Univ, Sch Phys Sci & Engn, Inst Optoelect & Funct Composite Mat, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

CRYSTAL GROWTH & DESIGN | 2009年 / 9卷 / 03期

基金：

中国国家自然科学基金;

关键词：

BEAM EVAPORATION TECHNIQUE; OPTICAL-PROPERTIES; DIAMOND FILMS; NANOCRYSTALS; GERMANIUM; TRANSITIONS; SILICON; SI;

D O I：

10.1021/cg800633j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The high-pressure nanophase, that is, the metastable tetragonal structure, of germanium is trapped by a facile technique named electrical-field assisted pulsed laser ablation in liquid at ambient pressure and temperature. On the basis of X-ray diffraction, transmission electron microscopy, and Raman scattering analyses, the trapped Ge nanophase is identified to be the tetragonal structure rather than the diamond structure of bulk germanium. First-principles calculations are used to clarify the physical and chemical mechanisms of the tetragonal Ge formation upon laser ablation in liquid.

引用

收藏

页码：1390 / 1393

页数：4

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