Crosstalk Analysis of Through Silicon Vias With Low Pitch-to-diameter ratio in 3D-IC

被引：0
|
作者：
Liu, Sheng [1 ]
Zhu, Jianping [1 ]
Shi, Yongrong [1 ]
Hu, Xing [1 ]
Tang, Wanchun [2 ]
机构：
[1] Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Nanjing 210094, Jiangsu, Peoples R China
[2] Nanjing Normal Univ, Dept Commun Engn, Nanjing PT-210023, Peoples R China
来源：
2013 PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON ANTENNAS AND PROPAGATION (ISAP), VOLS 1 AND 2 | 2013年
关键词：
TSV; COMPUTATION; MODEL;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
An equivalent circuit model for low pitch-to-diameter ratio (P/D) through silicon via (TSV) in three-dimensional integrated circuit (3-D IC) is proposed in this paper. The shunt admittance of this model is calculated based on the method of moments which can accurately capture the proximity effect for both a TSV pair and TSV array. The metal-oxide-semiconductor (MOS) capacitance of TSV is also considered. With this model, the crosstalk of TSV array can be fully analyzed regardless of the pitch. The results by this model agree well with those by the electromagnetic simulations up to 40GHz.
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页数：4
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