Growth of GaN nanorods by a hydride vapor phase epitaxy method

被引：0

作者：

Kim, HM ^{[1
]}

Kim, DS

Park, YS

Kim, DY

Kang, TW

Chung, KS

机构：

[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Kyung Hee Univ, Dept Elect Engn, Kyonggi Do 449401, South Korea

来源：

ADVANCED MATERIALS | 2002年 / 14卷 / 13-14期

关键词：

D O I：

10.1002/1521-4095(20020705)14:13/14<991::AID-ADMA991>3.0.CO;2-L

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Straight and well-aligned GaN nanorods have been obtained by horizontal hydride vapor phase epitaxy (HVPE) at a relatively low temperature (similar to480degreesC). This catalyst- and template- independent method involves the controllable growth of GaN nanorods on a sapphire substrate, with the rods preferentially oriented along the crystal c-axis. The Figure shows a cross-sectional SEM image of the GaN nanorods.

引用

页码：991 / +

页数：4

共 14 条

[1]

Chen CC, 2000, ADV MATER, V12, P738, DOI 10.1002/(SICI)1521-4095(200005)12:10<738::AID-ADMA738>3.0.CO

[2]

2-J

[3] Large-scale synthesis of single crystalline gallium nitride nanowires [J].

Cheng, GS ;

Zhang, LD ;

Zhu, Y ;

Fei, GT ;

Li, L ;

Mo, CM ;

Mao, YQ .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2455-2457

[4] CRYSTAL-GROWTH OF GAN BY THE REACTION BETWEEN GALLIUM AND AMMONIA [J].

ELWELL, D ;

FEIGELSON, RS ;

SIMKINS, MM ;

TILLER, WA .

JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) :45-54

[5] Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction [J].

Han, WQ ;

Fan, SS ;

Li, QQ ;

Hu, YD .

SCIENCE, 1997, 277 (5330) :1287-1289

[6] Synthesis of GaN-carbon composite nanotubes and GaN nanorods by arc discharge in nitrogen atmosphere [J].

Han, WQ ;

Redlich, P ;

Ernst, F ;

Rühle, M .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :652-654

[7] Formation of GaN nanorods by a sublimation method [J].

Li, JY ;

Chen, XL ;

Qiao, ZY ;

Cao, YG ;

Lan, YC .

JOURNAL OF CRYSTAL GROWTH, 2000, 213 (3-4) :408-410

[8] HETEROEPITAXIAL THERMAL GRADIENT SOLUTION GROWTH OF GAN [J].

LOGAN, RA ;

THURMOND, CD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) :1727-&

[9] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

[10] The roles of structural imperfections in InGaN-Based blue light-emitting diodes and laser diodes [J].

Nakamura, S .

SCIENCE, 1998, 281 (5379) :956-961

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