Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate

被引:34
作者
Kladko, V. P. [1 ]
Kolomys, A. F. [1 ]
Slobodian, M. V. [1 ]
Strelchuk, V. V. [1 ]
Raycheva, V. G. [1 ]
Belyaev, A. E. [1 ]
Bukalov, S. S. [2 ]
Hardtdegen, H. [3 ,4 ]
Sydoruk, V. A. [3 ,4 ]
Klein, N. [3 ,4 ]
Vitusevich, S. A. [3 ,4 ]
机构
[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, UA-0328 Kiev, Ukraine
[2] Russian Acad Sci, Sci & Tech Ctr Raman Spect, AN Nesmeyanov Organoelement Cpds Inst, Moscow 119991, Russia
[3] Forschungszentrum Julich, Inst Bio & Nanosyst, D-52425 Julich, Germany
[4] Forschungszentrum Julich, CNI Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany
关键词
aluminium compounds; crystal structure; dislocation density; elastic deformation; gallium compounds; III-V semiconductors; internal stresses; MOCVD; mosaic structure; Raman spectra; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; wide band gap semiconductors; X-ray diffraction; LIGHT-EMITTING-DIODES; GAN EPITAXIAL LAYERS; X-RAY-DIFFRACTION; GROUP-III NITRIDE; MOSAIC-STRUCTURE; GALLIUM NITRIDE; RAMAN; STRESS; FILMS; PHOTOLUMINESCENCE;
D O I
10.1063/1.3094022
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we investigate the structural properties of AlGaN/GaN heterostructures grown by metal organic chemical vapor deposition on sapphire substrates with different thicknesses using high-resolution x-ray diffraction and Raman scattering methods. We discuss the microscopic nature of spatial-inhomogeneous deformations and dislocation density in the structures. Microdeformations within mosaic blocks and the sizes of regions of coherent diffraction are determined. We reveal a gradient depth distribution of deformations in the mosaic structure of nitride layers, as well as at the interface regions of the sapphire substrate on the microscale level using confocal micro-Raman spectroscopy. We determine that an increase in substrate thickness leads to a reduction in dislocation density in the layers and an increase in the elastic deformations. The features of the block structure of nitrides layers are shown to have a significant influence on their elastic properties.
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页数:9
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