Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate

被引：2

作者：

Rossetto, I. ^{[1
]}

Rampazzo, F. ^{[1
]}

Silvestri, R. ^{[1
]}

Zanandrea, A. ^{[1
]}

Dua, C. ^{[2
]}

Delage, S. ^{[2
]}

Oualli, M. ^{[2
]}

Meneghini, M. ^{[1
]}

Zanoni, E. ^{[1
]}

Meneghesso, G. ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[2] THALES 3 5 Lab, F-91461 Marcoussis, France

来源：

MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2013.07.048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper GaN based HEMT structures characterized by a 6.3 nm InAIN barrier layer and a different gate contact (Mo/Au and Ni/Pt/Au) are described. The effects of a different gate contact structure on DC and pulsed main characteristics are discussed. Despite no meaningful variation is noticed during DC analysis, pulsed evaluation demonstrates that the use of a Mo/Au gate contact leads to an improvement of trapping characteristics. Reliability performances of the devices are finally investigated by means of a OFF state three terminals step stress, proving that the use of a Mo/Au stack does not affect significantly the device stability during the stress. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1476 / 1480

页数：5

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