Structural Modularization of Cu2Te Leading to High Thermoelectric Performance near the Mott-Ioffe-Regel Limit

被引：36

作者：

Zhao, Kunpeng ^{[1
,2
]}

Zhu, Chenxi ^{[3
]}

Zhu, Min ^{[4
]}

Chen, Hongyi ^{[5
]}

Lei, Jingdan ^{[1
]}

Ren, Qingyong ^{[6
]}

Wei, Tian-Ran ^{[1
,2
]}

Qiu, Pengfei ^{[3
]}

Xu, Fangfang ^{[3
]}

Chen, Lidong ^{[3
]}

He, Jian ^{[7
]}

Shi, Xun ^{[1
,3
]}

机构：

[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China

[2] Wuzhen Lab, Tongxiang 314500, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[5] Cent South Univ, Coll Chem & Chem Engn, Changsha 410083, Peoples R China

[6] Chinese Acad Sci, Inst High Energy Phys, China Spallat Neutron Source, Beijing 100049, Peoples R China

[7] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA

来源：

ADVANCED MATERIALS | 2022年 / 34卷 / 19期

基金：

中国国家自然科学基金;

关键词：

copper telluride; structural modularization; the Mott-Ioffe-Regel limit; thermoelectric; LOW THERMAL-CONDUCTIVITY; TRANSPORT; COPPER; LOCALIZATION; DIFFUSION; ELECTRON; ABSENCE; FIGURE; ENERGY; PHASE;

D O I：

10.1002/adma.202108573

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

To date, thermoelectric materials research stays focused on optimizing the material's band edge details and disfavors low mobility. Here, the paradigm is shifted from the band edge to the mobility edge, exploring high thermoelectricity near the border of band conduction and hopping. Through coalloying iodine and sulfur, the plain crystal structure is modularized of liquid-like thermoelectric material Cu2Te with mosaic nanograins and the highly size mismatched S/Te sublattice that chemically quenches the Cu sublattice and drives the electronic states from itinerant to localized. A state-of-the-art figure of merit of 1.4 is obtained at 850 K for Cu-2(S0.4I0.1Te0.5); and remarkably, it is achieved near the Mott-Ioffe-Regel limit unlike mainstream thermoelectric materials that are band conductors. Broadly, pairing structural modularization with the high performance near the Mott-Ioffe-Regel limit paves an important new path towards the rational design of high-performance thermoelectric materials.

引用

页数：10

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