Characteristics of BaNbxTi1-xO3 thin films grown by laser molecular beam epitaxy

被引：10
作者：
Yan, L
Lu, HB
Chen, ZH
Dai, SY
Zhou, YL
Yang, GZ
机构：
[1] Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 244卷 / 3-4期
关键词：
characterization; X-ray diffraction; laser epitaxy; molecular beam epitaxy; oxides; semiconducting materials;
D O I：
10.1016/S0022-0248(02)01604-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The n-type conductive BaNbxTi1-xO3 (0-01less than or equal toxless than or equal to0.3) thin films with (h00) orientation and a root-mean-square surface roughness of 2.40 Angstrom were grown on SrTiO3 (100) substrates by a computer-controlled laser molecular beam epitaxy. The films with x = 0.3 Nb-doped content show the lowest resistivity of 6.05 x 10(-5) Omega cm at room temperature. This value is three orders of magnitude lower than those reported for sintered, single crystals and thin films of Nb-doped BaTiO3. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：225 / 228
页数：4
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