Investigation of epitaxial growth and tunnel magnetoresistance effects in magnetic tunnel junctions including spinel ferrite layers

被引：1
作者：
Takahashi, Nozomi [1 ]
Kawai, Tomohiro [1 ]
Yanase, Takashi [2 ]
Shimada, Toshihiro [2 ]
Nagahama, Taro [2 ]
机构：
[1] Hokkaido Univ, Grad Sch Chem Sci & Engn, Sapporo, Hokkaido 0608682, Japan
[2] Hokkaido Univ, Grad Sch Engn, Sapporo, Hokkaido 0608628, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 11期
关键词：
ROOM-TEMPERATURE; FILMS;
D O I：
10.7567/JJAP.54.118003
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The combination of magnetic tunnel junctions (MTJs) and magnetic insulating (MI) layers has attracted much attention because of its potential as novel spintronic devices. To realize such devices, the epitaxial growth and magnetoresistance of MTJs with spinel ferrite were investigated. Nonmagnetic (NM) layers were inserted between the MTJs and MI layers as magnetic decoupling layers, the epitaxial growth of which was important to obtain high-quality epitaxial multilayers. Multilayers of MTJ/NM/MI and MI/NM/MTJ were fabricated and tunnel magnetoresistance (TMR) values of 70 and 50% at room temperature, respectively, were observed. The shape of the magnetoresistance curve depended on the sample structure. (C) 2015 The Japan Society of Applied Physics
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页数：3
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