First-Principles Study on Graphene/Hexagonal Boron Nitride Heterostructures

被引：19

作者：

Sakai, Yuki ^{[1
,2
,3
]}

Saito, Susumu ^{[2
,4
]}

Cohen, Marvin L. ^{[3
,5
]}

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[2] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[4] Tokyo Inst Technol, Int Res Ctr Nanosci & Quantum Phys, Meguro Ku, Tokyo 1528551, Japan

[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2015年 / 84卷 / 12期

基金：

日本学术振兴会;

关键词：

GRAPHENE/MONOLAYER H-BN; SCANNING-TUNNELING-MICROSCOPY; MASSLESS DIRAC FERMIONS; ELECTRONIC-STRUCTURE; NOBEL LECTURE; BAND-GAP; CRYSTAL-STRUCTURE; WAVE-FUNCTIONS; ATOMIC LAYERS; GRAPHENE;

D O I：

10.7566/JPSJ.84.121002

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This article reviews recent progresses in first-principles studies on graphene/hexagonal boron nitride (h-BN) heterostructures. The experimental demonstration of the usefulness of hexagonal boron nitride as a substrate for graphene devices has attracted considerable interest of graphene/h-BN heterostructure systems. More complicated graphene/h-BN heterostructures have also been fabricated in recent years. In parallel with the experimental progress, first-principles studies have also revealed interesting properties of these heterostructures. The structural and electronic properties of the graphene/h-BN heterostructures are discussed here based on the recent first-principles results.

引用

页数：11

共 129 条

[1] Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy [J].

Alem, Nasim ;

Erni, Rolf ;

Kisielowski, Christian ;

Rossell, Marta D. ;

Gannett, Will ;

Zettl, A. .

PHYSICAL REVIEW B, 2009, 80 (15)

[2] Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers [J].

Balu, Radhakrishnan ;

Zhong, Xiaoliang ;

Pandey, Ravindra ;

Karna, Shashi P. .

APPLIED PHYSICS LETTERS, 2012, 100 (05)

[3] LATTICE CONSTANTS OF GRAPHITE AT LOW TEMPERATURES [J].

BASKIN, Y ;

MEYER, L .

PHYSICAL REVIEW, 1955, 100 (02) :544-544

[4] Strain-tunable band gap in graphene/h-BN hetero-bilayer [J].

Behera, Harihar ;

Mukhopadhyay, Gautam .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2012, 73 (07) :818-821

[5] The structure of graphite [J].

Bernal, JD .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1924, 106 (740) :749-773

[6] Electronic structure of a graphene/hexagonal-BN heterostructure grown on Ru(0001) by chemical vapor deposition and atomic layer deposition: extrinsically doped graphene [J].

Bjelkevig, Cameron ;

Mi, Zhou ;

Xiao, Jie ;

Dowben, P. A. ;

Wang, Lu ;

Mei, Wai-Ning ;

Kelber, Jeffry A. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2010, 22 (30)

[7] Hybrid Surface-Phonon-Plasmon Polariton Modes in Graphene/Monolayer h-BN Heterostructures [J].

Brar, Victor W. ;

Jang, Min Seok ;

Sherrott, Michelle ;

Kim, Seyoon ;

Lopez, Josue J. ;

Kim, Laura B. ;

Choi, Mansoo ;

Atwater, Harry .

NANO LETTERS, 2014, 14 (07) :3876-3880

[8] Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films [J].

Britnell, L. ;

Ribeiro, R. M. ;

Eckmann, A. ;

Jalil, R. ;

Belle, B. D. ;

Mishchenko, A. ;

Kim, Y. -J. ;

Gorbachev, R. V. ;

Georgiou, T. ;

Morozov, S. V. ;

Grigorenko, A. N. ;

Geim, A. K. ;

Casiraghi, C. ;

Castro Neto, A. H. ;

Novoselov, K. S. .

SCIENCE, 2013, 340 (6138) :1311-1314

[9] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].

Britnell, L. ;

Gorbachev, R. V. ;

Jalil, R. ;

Belle, B. D. ;

Schedin, F. ;

Mishchenko, A. ;

Georgiou, T. ;

Katsnelson, M. I. ;

Eaves, L. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Leist, J. ;

Geim, A. K. ;

Novoselov, K. S. ;

Ponomarenko, L. A. .

SCIENCE, 2012, 335 (6071) :947-950

[10] Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers [J].

Britnell, Liam ;

Gorbachev, Roman V. ;

Jalil, Rashid ;

Belle, Branson D. ;

Schedin, Fred ;

Katsnelson, Mikhail I. ;

Eaves, Laurence ;

Morozov, Sergey V. ;

Mayorov, Alexander S. ;

Peres, Nuno M. R. ;

Castro Neto, Antonio H. ;

Leist, Jon ;

Geim, Andre K. ;

Ponomarenko, Leonid A. ;

Novoselov, Kostya S. .

NANO LETTERS, 2012, 12 (03) :1707-1710

← 1 2 3 4 5 6 7 8 9 10 →