Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices

A particle-particle-particle-mesh ((PM)-M-3) algorithm is integrated with the ensemble Monte Carlo (EMC) method for the treatment of carrier-impurity (c-i) and carrier-carrier (c-c) effects in semiconductor device simulation, Ionized impurities and charge carriers are treated granularly as opposed to the normal continuum methods and c-i and c-c interactions are calculated in three dimensions. The combined (PM)-M-3-EMC method follows the approach of Hockney, but is modified to treat nonuniform rectilinear meshes with arbitrary boundary conditions. Bulk mobility results are obtained for a three-dimensional (3-D) resistor and are compared with previously reported experimental and numerical results.