Intrinsic mobility in graphene

被引:104
作者
Shishir, R. S. [1 ]
Ferry, D. K.
机构
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
关键词
CHARGED-IMPURITY SCATTERING; POLAR PHONON-SCATTERING; SI INVERSION-LAYERS; ELECTRON-MOBILITY; TRANSPORT;
D O I
10.1088/0953-8984/21/23/232204
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Recent studies have shown that a high K dielectric solvent screens the impurities for room temperature transport in graphene and the mobility has been found to increase by orders of magnitude. This gives what is probably the intrinsic, phonon limited mobility at room temperature, and we have confirmed this with simulation. Mobility as high as 44 000 cm(2) V-1 s(-1) was achieved. At very low density, impurity scattering still is the determining factor for mobility, but this is significantly reduced in the recent experiments due to the dielectric screening. At high density, impurity scattering becomes negligible.
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页数:4
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