Experimental and theoretical study of the electronic properties Of COSi2 and NiSi2

被引:11
作者
García-Méndez, M
Galvan, DH
Posada-Amarillas, A
Farías, MH
机构
[1] UANL, Fac Ciencias Fisicomatemat, Mexico City 66450, NL, Mexico
[2] Univ Nacl Autonoma Mexico, Ctr Ciencias Mat Condensada, Ensenada, Baja California, Mexico
[3] Univ Sonora, Dept Invest Fis, Hermosillo 83190, Sonora, Mexico
关键词
Co and Ni silicides; x-ray photoelectron spectroscopy; COOP;
D O I
10.1016/j.apsusc.2004.03.001
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electronic structure of Co and Ni silicides were studied by means of the spectral properties of XPS high-resolution measurements together with theoretical calculations using crystal orbital overlap population (COOP) analysis. Calculations were carried out for CoSi2 and NiSi2 microstructures. Analysis from calculations shows that hybridization is stronger in Co disilicide than in Ni disilicide. Close to the Fermi level, we noticed that for the Co disilicide there is a small distribution (bonding and antibonding) to the total COOP, while the contribution from the Ni disilicide is null. XPS analysis of sample under study gives evidence about the covalent bonding when the chemical shifts for the Co 2p(3/2), Ni 2p(3/2) and Si 2p transitions are analyzed in the depth-profile mode. (C) 2004 Published by Elsevier B.V.
引用
收藏
页码:386 / 392
页数:7
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