Laser fluence effect on the formation of dielectric Pb1-xLaxTi1-x/4O3 thin films

被引：7

作者：

Eun, DS ^{[1
]}

Lee, SY ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect Engn, Seodaemungu Gu, Seoul 120749, South Korea

来源：

THIN SOLID FILMS | 1999年 / 357卷 / 02期

关键词：

laser fluence; Pb1-xLaxTi1-x/4O3 thin films; scanning electron microscopy;

D O I：

10.1016/S0040-6090(99)00643-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dielectric thin films of Pb0.72La0.28Ti0.93O3 (PLT(28)) have been deposited on Pt/Ti/SiO2/Si substrates in situ by a laser ablation at a low temperature of 450 degrees C. We have systematically investigated the effect of the laser energy density on the properties of PLT thin films. The laser energy density has been varied from 0.4 to 3 J/cm(2). The surface morphology was observed to be changed from a planar structure to a columnar structure with increasing the laser energy density by scanning electron microscopy (SEM). The crystal structure of the thin films strongly depends on the laser energy density observed by X-ray diffraction (XRD). The electrical measurement indicated that the optimized laser fluence was 2.5 J/cm(2) for the fabrication of laser ablated PLT thin films which could be suitable as a dielectric capacitor film for the future DRAM applications. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：232 / 236

页数：5