Preparation and electronic device properties of single crystalline La2-xSrxCuO4 superconducting film

被引：0

作者：

Islam, ATMN ^{[1
]}

Ashizawa, K ^{[1
]}

Watauchi, S ^{[1
]}

Tanaka, I ^{[1
]}

机构：

[1] Yamanashi Univ, Inst Inorgan Synth, Kofu, Yamanashi 4008511, Japan

来源：

MATERIALS FOR HIGH-TEMPERATURE SUPERCONDUCTOR TECHNOLOGIES | 2002年 / 689卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have grown La2-xSrxCuO4 single-crystalline films on a(tetra)-axis oriented Zn doped La2CuO4 single crystals by IR-LPE technique. The films show thickness dependence of T-c,T-onset, but films of thickness below 80mum doesn't show zero resistance down to 4.2K. The I-V characteristics showed reduced voltage jump than usual and small hysteresis. This phenomenon resembles with the characteristics of resistively and capacitively shunted intrinsic Josephson junctions (RCSJ).

引用

页码：181 / 185

页数：5

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