Formation of AlN films by Al evaporation with nitrogen ion beam bombardment

被引：20
作者：
He, XJ [1 ]
Yang, SZ [1 ]
Tao, K [1 ]
Fan, YD [1 ]
机构：
[1] TSING HUA UNIV,DEPT MAT SCI & ENGN,BEIJING 100084,PEOPLES R CHINA
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1997年 / 51卷 / 02期
基金：
中国国家自然科学基金;
关键词：
aluminum nitride films; ion beam assisted deposition (IBAD);
D O I：
10.1016/S0254-0584(97)80295-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Aluminum nitride films were synthesized by electron gun evaporation of aluminum on to Si(111) wafer with simultaneous bombardment by nitrogen ions. Under special conditions, polycrystalline AlN films of fine crystallinity were obtained. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：199 / 201
页数：3
相关论文
共 10 条
  • [1] ION-BOMBARDMENT OF ALN FILMS DEPOSITED IN A REACTIVE SPUTTERING PROCESS WITH ACCURATE CONTROL OF THE MASS-FLOW OF THE REACTIVE GAS
    ALKJAERSIG, K
    CHRISTENSEN, HB
    GUPTA, BK
    JENSEN, H
    JENSEN, UM
    PEDERSEN, GN
    SORENSEN, G
    [J]. SURFACE & COATINGS TECHNOLOGY, 1992, 51 (1-3) : 500 - 508
  • [2] TITANIUM NITRIDE-MOLYBDENUM METALLIZING METHOD FOR ALUMINUM NITRIDE
    ASAI, H
    UENO, F
    IWASE, N
    SATO, H
    MIZUNOYA, N
    KIMURA, T
    ENDO, K
    TAKAHASHI, T
    SUGIURA, Y
    [J]. IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1990, 13 (02): : 457 - 461
  • [3] ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS AT 200-250-DEGREES C
    GORDON, RG
    HOFFMAN, DM
    RIAZ, U
    [J]. JOURNAL OF MATERIALS RESEARCH, 1991, 6 (01) : 5 - 7
  • [4] EFFECT OF ION-BOMBARDMENT DURING DEPOSITION ON THE X-RAY MICROSTRUCTURE OF THIN SILVER FILMS
    HUANG, TC
    LIM, G
    PARMIGIANI, F
    KAY, E
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2161 - 2166
  • [5] IIESKE N, 1981, J APPL PHYS, V52, P5806
  • [6] KOBAYASHI K, 1991, NUCL INSTRUM METH B, V59, P467
  • [7] GROWTH OF ALUMINUM NITRIDE THIN-FILMS ON SI(111) AND SI(001) - STRUCTURAL CHARACTERISTICS AND DEVELOPMENT OF INTRINSIC STRESSES
    MENG, WJ
    SELL, JA
    PERRY, TA
    REHN, LE
    BALDO, PM
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (07) : 3446 - 3455
  • [8] FORMATION OF AIN BY NITROGEN MOLECULE ION-IMPLANTATION
    OHIRA, S
    IWAKI, M
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 162 - 166
  • [9] SERPHIN DP, 1989, PRINCIPLES ELECT PAC, P282
  • [10] SMIDT FA, 1990, INT MAT REV, V35, P111
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