Type I and type II band alignments in ZnO/MgZnO bilayer films

被引：19

作者：

Agrawal, Arpana ^{[1
]}

Dar, Tanveer Ahmad ^{[1
]}

Phase, D. M. ^{[2
]}

Sen, Pratima ^{[1
]}

机构：

[1] Devi Ahilya Univ, Sch Phys, Indore 452001, Madhya Pradesh, India

[2] UGC DAE Consortium Sci Res, Indore 452001, Madhya Pradesh, India

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 08期

关键词：

TEMPERATURE; VALENCE;

D O I：

10.1063/1.4893986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the change in the type of band alignments due to an increase in the dopant (Mg) concentration in pulsed laser deposited ZnO/MgZnO bilayer film. The band offset measurements were carried out from the core level shifts as well as valence band maxima in the single as well as the bilayer films. The change in the type of band alignment is attributed to the surface enrichment of Mg at the heterojunction. (C) 2014 AIP Publishing LLC.

引用

页数：4

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