Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

被引：35

作者：

Fiorenza, P. ^{[1
]}

Swanson, L. K. ^{[1
]}

Vivona, M. ^{[1
]}

Giannazzo, F. ^{[1
]}

Bongiorno, C. ^{[1
]}

Frazzetto, A. ^{[2
]}

Roccaforte, F. ^{[1
]}

机构：

[1] CNR, IMM, I-95121 Catania, Italy

[2] STMicroelectronics, I-95121 Catania, Italy

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 115卷 / 01期

关键词：

SIO2/4H-SIC INTERFACE; SILICON-CARBIDE; POWER DEVICES; NITRIC-OXIDE; MOBILITY; STATES; TEMPERATURE; DENSITY; ISSUES; GLASS;

D O I：

10.1007/s00339-013-7824-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper compares the behavior of the gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition annealing (PDA) in N2O and POCl3. A significantly higher channel mobility was measured in 4H-SiC MOSFETs subjected to PDA in POCl3 (108 cm(2) V-1 s(-1)) with respect to N2O (19 cm(2) V-1 s(-1)), accompanying a reduction of the interface traps density. Hence, a different temperature coefficient of the mobility and of the threshold voltage was observed in the two cases. According to structural analysis, the gate oxide subjected to PDA in POCl3 showed a different surface morphology than that treated in N2O, as a consequence of the strong incorporation of phosphorous inside the SiO2 matrix during annealing. This latter explained the instability of the electrical behavior of MOS capacitors annealed in POCl3.

引用

页码：333 / 339

页数：7

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