High temperature resistant packaging for SiC power devices using interconnections formed by Ni micro-electroplating

High temperature SiC devices require the materials for packaging also capable of working at higher temperature than those for Si devices. SiC devices are expected to help hybrid vehicle power control units (PCUs) produce higher power in a more compact size as SiC can withstand higher voltages and temperatures (above 300 degrees C) than silicon with less power loss. The improvement of interconnection technologies is increasingly becoming a top priority, particularly for the operation of SiC devices at relatively high temperatures. We propose a new interconnection method using nickel electroplating to replace Al wire bonding or die-bonding using solder materials. During the evaluation of the reliability of interconnections annealed at up to 500 degrees C, we observed no significant changes in mechanical or electrical properties. We found that micro-plating connections can be used successfully for high-temperature-resistant packaging for SiC devices.