Doping mechanisms in graphene-MoS2 hybrids

被引:108
|
作者
Sachs, B. [1 ]
Britnell, L. [2 ]
Wehling, T. O. [3 ,4 ]
Eckmann, A. [2 ]
Jalil, R. [5 ]
Belle, B. D. [5 ]
Lichtenstein, A. I. [1 ]
Katsnelson, M. I. [6 ]
Novoselov, K. S. [2 ]
机构
[1] Univ Hamburg, Inst Theoret Phys 1, D-20355 Hamburg, Germany
[2] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
[3] Univ Bremen, Inst Theoret Phys, D-28359 Bremen, Germany
[4] Univ Bremen, Bremen Ctr Computat Mat Sci, D-28359 Bremen, Germany
[5] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
[6] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands
关键词
TRANSITION;
D O I
10.1063/1.4852615
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer molybdenum disulfide (MoS2). From first-principles simulations, we find electron doping of graphene due to the presence of rhenium impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows the use of the graphene-MoS2 hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local doping levels in the sample. (C) 2013 AIP Publishing LLC.
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页数:5
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