Low-dropout voltage reference: an approach to low-temperature-sensitivity architectures with high drive capability

被引:13
|
作者
Aminzadeh, H. [1 ]
Lotfi, R. [1 ]
Mafinezhad, K. [1 ]
机构
[1] Ferdowsi Univ Mashhad, Dept Elect Engn, Mashhad, Iran
关键词
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I
10.1049/el.2009.1531
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A modified circuit topology for voltage references capable of providing very high load current with low-temperature-sensitivity output voltage is presented. Employing a proportional-to-absolute-temperature current source and a complementary-to-absolute-temperature voltage source in a novel closed-loop configuration, the output voltage can be tuned over a wide range of voltages lower or higher than the silicon bandgap voltage. These features make the configuration a promising competitor for low-dropout regulators. A possible implementation of the proposed topology in 0.18 mu m technology shows that the simulated 0.9 and 1.3 V voltage references have fast and stable operation for load currents up to 100 mA. The temperature coefficient for both design cases is smaller than 37 ppm/degrees C.
引用
收藏
页码:1200 / U17
页数:2
相关论文
empty
未找到相关数据