Highly efficient continuous-wave 912 nm Nd:GdVO4 laser emission under direct 880 nm pumping

被引:60
作者
Lue, Y. F. [1 ]
Zhang, X. H. [1 ]
Xia, J. [1 ]
Zhang, A. F. [2 ]
Yin, X. D. [3 ]
Bao, L. [1 ]
机构
[1] Changchun Univ Sci & Technol, Sch Sci, Changchun 130022, Peoples R China
[2] Jilin Junkun Optoelect Co Ltd, Changchun 130012, Peoples R China
[3] Xian Inst Appl Opt, Lab Infointegrat Technol, Xian 710065, Peoples R China
关键词
lasers and laser optics; lasers; diode-pumped; pumping; ND-YAG LASER; EMITTING LEVEL; ND-GDVO4; 1.34-MU-M; OPERATION; GENERATION; ND-YVO4; 946-NM;
D O I
10.1002/lapl.200910082
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The quasi three level 912 nm continuous wave laser emission under directed diode laser pumping at 880 nm into emitting level F-1(3/2) of Nd:GdVO4 have been demonstrated. An end pumped Nd:GdVO4 crystal yielding 8.1 W of output power of 13.9 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 0.679. To the best of our knowledge this is the first demonstration of such a laser system. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-obsorbing F-4(5/2) level are given in order to prove the advantages of the 880 nm wavelength pumping. (C) 2009 by Astro Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:796 / 799
页数:4
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