Influence of orientation mismatch on charge transport across grain boundaries in tri-isopropylsilylethynyl (TIPS) pentacene thin films

被引:26
|
作者
Steiner, Florian [1 ,2 ]
Poelking, Carl [3 ]
Niedzialek, Dorota [1 ,2 ]
Andrienko, Denis [3 ]
Nelson, Jenny [1 ,2 ]
机构
[1] Imperial Coll London, Dept Phys, London SW7 2AZ, England
[2] Imperial Coll London, Ctr Plast Elect, London SW7 2AZ, England
[3] Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany
基金
英国工程与自然科学研究理事会;
关键词
FIELD-EFFECT TRANSISTORS; PROCESSED ORGANIC SEMICONDUCTOR; POLYCRYSTALLINE SILICON FILMS; EFFECT MOBILITY; ORDER; HETEROJUNCTIONS; MICROSTRUCTURE; MORPHOLOGY; ENERGETICS; POLYMERS;
D O I
10.1039/c6cp06436a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present a multi-scale model for charge transport across grain boundaries in molecular electronic materials that incorporates packing disorder, electrostatic and polarisation effects. We choose quasi two-dimensional films of tri-isopropylsilylethynyl pentacene (TIPS-P) as a model system representative of technologically relevant crystalline organic semiconductors. We use atomistic molecular dynamics, with a force-field specific for TIPS-P, to generate and equilibrate polycrystalline two-dimensional thin films. The energy landscape is obtained by calculating contributions from electrostatic interactions and polarization. The variation in these contributions leads to energetic barriers between grains. Subsequently, charge transport is simulated using a kinetic Monte-Carlo algorithm. Two-grain systems with varied mutual orientation are studied. We find relatively little effect of long grain boundaries due to the presence of low impedance pathways. However, effects could be more pronounced for systems with limited inter-grain contact areas. Furthermore, we present a lattice model to generalize the model for small molecular systems. In the general case, depending on molecular architecture and packing, grain boundaries can result in interfacial energy barriers, traps or a combination of both with qualitatively different effects on charge transport.
引用
收藏
页码:10854 / 10862
页数:9
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