Anisotropy of thermal conductivity in In2Se3 nanostructures

被引:17
作者
Hsin, Cheng-Lun [1 ]
Huang, Jian-Hao [1 ]
Spiewak, Piotr [2 ]
Ciupinski, Lukasz [2 ]
Lee, Sheng-Wei [3 ]
机构
[1] Natl Cent Univ, Dept Elect Engn, Taoyuan 32001, Taiwan
[2] Warsaw Univ Technol, 141 Woloska Str, PL-02507 Warsaw, Poland
[3] Natl Cent Univ, Inst Mat Sci & Engn, Taoyuan 32001, Taiwan
关键词
Anisotropy; Thermal conductivity; In2Se3; Nanostructures; TEM; THERMOELECTRIC PERFORMANCE;
D O I
10.1016/j.apsusc.2019.07.233
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this report, alpha-In2Se3 single-crystal nanobelts and nanowires were grown in the thermal chemical vapor deposition furnace. The growth direction of the nanobelts was identified by standard microscopy techniques and was along the in-plane direction, while that of the nanowire was along the c-axis. The temperature-dependent thermal conductivity of the nanostructures was measured by a suspended-pattern technique, and it was found to fall into two ranges of values between 300 and 400 K owing to the difference in growth orientation. The experimental evidence presented herein is the anisotropy of phonon transport of the layered alpha-In2Se3, and the effect of bonding strength on the thermal conductivity at the nanoscale. This study would be helpful to the physical understanding and future design of In2Se3-based thermoelectric materials.
引用
收藏
页码:867 / 870
页数:4
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