Progress in long wavelength VCSELs

被引：0
|
作者：
Tan, MRT [1 ]
机构：
[1] Agilent Labs, Palo Alto, CA 94304 USA
来源：
2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：269 / 270
页数：2
相关论文
共 50 条
  • [1] Progress and prospects of long-wavelength VCSELs
    Chang-Hasnain, CJ
    IEEE COMMUNICATIONS MAGAZINE, 2003, : S30 - S34
  • [2] Progress and prospects of long-wavelength VCSELs
    Chang-Hasnain, Connie J.
    IEEE Communications Magazine, 2003, 41 (02)
  • [3] Long-wavelength VCSELs
    Maute, M
    Amann, MC
    2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, : 695 - 699
  • [4] Long wavelength VCSELs at Honeywell
    Johnson, R
    Blasingame, V
    Tatum, J
    Chen, BS
    Mathes, D
    Orenstein, J
    Wang, TY
    Kim, J
    Kwon, HK
    Ryou, JH
    Park, G
    Kalweit, E
    Chanhvongsak, H
    Ringle, M
    Marta, T
    Gieske, J
    VERTICAL-CAVITY SURFACE-EMITTING LASERS VII, 2003, 4994 : 222 - 234
  • [5] The race toward long wavelength VCSELs
    Choquette, KD
    LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 594 - 595
  • [6] Long wavelength VCSELs with AlGaAsSb DBRs
    Nakagawa, S
    Hall, E
    Coldren, LA
    SEMICONDUCTOR LASERS FOR LIGHTWAVE COMMUNICATION SYSTEMS, 2001, 4533 : 24 - 31
  • [7] Developments of Long-Wavelength VCSELs
    Kapon, Eli
    2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2008, : 1 - 2
  • [8] Long wavelength VCSELs on InP grown by MOCVD
    Nishiyama, N
    Caneau, C
    Zah, CE
    ACTIVE AND PASSIVE OPTICAL COMPONENTS FOR WDM COMMUNICATIONS III, 2003, 5246 : 10 - 17
  • [9] Frequency tuning of long-wavelength VCSELs
    Lytkine, A
    Jäger, W
    Tulip, J
    SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2006, 63 (05) : 940 - 946
  • [10] GaInNAs, a new material for long wavelength VCSELs
    Harris, JS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S306 - S312
12345