Gettering Mechanism in Carbon-cluster-ion-implanted Epitaxial Silicon Wafers using Atom Probe Tomography

被引：0

作者：

Onaka-Masada, Ayumi ^{[1
,2
]}

Okuyama, Ryosuke ^{[2
]}

Shigematsu, Satoshi ^{[2
]}

Okuda, Hidehiko ^{[2
]}

Kadono, Takeshi ^{[2
]}

Hirose, Ryo ^{[2
]}

Koga, Yoshihiro ^{[2
]}

Sueoka, Koji ^{[1
]}

Kurita, Kazunari ^{[2
]}

机构：

[1] Okayama Pref Univ, Okayama, Japan

[2] SUMCO Corp, Tokyo, Japan

来源：

2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018) | 2018年

关键词：

Gettering; Silicon; Atom prove tomograpy;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The difference in agglomerate defects formed by carbon-cluster-ion-implanted Czochralski (CZ)-Si and epitaxial Si has been investigated using atom probe tomography. In the previous work, we reported on the strong gettering capability in implanted epitaxial Si. We found that the distribution of 0 and C atom concentrations on agglomerates differs between CZ-Si and epitaxial Si. This suggests that a C agglomerate, which grows without including 0 atoms, results in strong gettering efficiency for Fe.

引用

页码：166 / 168

页数：3

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