High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness

被引：26

作者：

Huang, Yu-Shiang ^{[1
]}

Tsou, Ya-Jui ^{[1
]}

Huang, Chih-Hsiung ^{[1
]}

Huang, Chih-Hao ^{[1
]}

Lan, Huang-Siang ^{[1
]}

Liu, Chee Wee ^{[2
,3
]}

Huang, Yi-Chiau ^{[4
]}

Chung, Hua ^{[4
]}

Chang, Chorng-Ping ^{[4
]}

Chu, Schubert S. ^{[4
]}

Kuppurao, Satheesh ^{[4
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Grad Inst Photon & Optoelect, Dept Elect Engn, Taipei 106, Taiwan

[3] Natl Nano Device Labs, Hsinchu 300, Taiwan

[4] Appl Mat Inc, Sunnyvale, CA 94085 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 06期

关键词：

Cap thickness dependent of mobility; GeSn; low-frequency (LF) noise; strain; LOW-FREQUENCY NOISE; HOLE MOBILITY; METAL GATE; 1/F NOISE; PASSIVATION; TECHNOLOGY; GERMANIUM; MOSFETS; SEGREGATION; DENSITY;

D O I：

10.1109/TED.2017.2695664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high peak mobility of 509 cm(2)/V . s of the chemical vapor deposition-grown GeSn pMOSFETs is obtained using 1-nm Ge cap. The Ge cap on GeSn can reduce the scattering of oxide/interface charges and surface roughness for the holes in the GeSn quantum wells. However, the thick cap induces holes in the Ge cap itself, leading lower mobility than GeSn channels. The on current is enhanced by external stress due to the effective mass reduction. The normalized noise power density of the GeSn devices decreases with increasing Ge cap thickness, indicating the carrier number fluctuation and correlated mobility fluctuation are suppressed when the holes are away from interface.

引用

页码：2498 / 2504

页数：7

共 55 条

[1]

Agrawal A., 2014, IEEE IEDM, P414

[2]

[Anonymous], 2011, IEDM, DOI DOI 10.1109/IEDM.2011.6131569

[3] Low-frequency noise and effective trap density of short channel p- and n-types junctionless nanowire transistors [J].

Doria, Rodrigo Trevisoli ;

Trevisoli, Renan ;

de Souza, Michelly ;

Pavanello, Marcelo Antonio .

SOLID-STATE ELECTRONICS, 2014, 96 :22-26

[4] Low-Frequency Noise Characterization of GeOx Passivated Germanium MOSFETs [J].

Fang, Wen ;

Simoen, Eddy ;

Arimura, Hiroaki ;

Mitard, Jerome ;

Sioncke, Sonja ;

Mertens, Hans ;

Mocuta, Anda ;

Collaert, Nadine ;

Luo, Jun ;

Zhao, Chao ;

Thean, Aaron Voon-Yew ;

Claeys, Cor .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (07) :2078-2083

[5] Six-band k•p calculation of the hole mobility in silicon inversion layers:: Dependence on surface orientation, strain, and silicon thickness [J].

Fischetti, MV ;

Ren, Z ;

Solomon, PM ;

Yang, M ;

Rim, K .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) :1079-1095

[6] Aggressive SiGe Channel Gate Stack Scaling by Remote Oxygen Scavenging: Gate-First pFET Performance and Reliability [J].

Frank, Martin M. ;

Cartier, Eduard A. ;

Ando, Takashi ;

Bedell, Stephen W. ;

Bruley, John ;

Zhu, Yu ;

Narayanan, Vijay .

ECS SOLID STATE LETTERS, 2013, 2 (02) :N8-N10

[7] Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs [J].

Gomez, Leonardo ;

Chleirigh, C. Ni ;

Hashemi, P. ;

Hoyt, J. L. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (08) :782-784

[8] Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS [J].

Gong, Xiao ;

Han, Genquan ;

Liu, Bin ;

Wang, Lanxiang ;

Wang, Wei ;

Yang, Yue ;

Kong, Eugene Yu-Jin ;

Su, Shaojian ;

Xue, Chunlai ;

Cheng, Buwen ;

Yeo, Yee-Chia .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (05) :1640-1648

[9] Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 °C Si2H6 Passivation [J].

Gong, Xiao ;

Han, Genquan ;

Bai, Fan ;

Su, Shaojian ;

Guo, Pengfei ;

Yang, Yue ;

Cheng, Ran ;

Zhang, Dongliang ;

Zhang, Guangze ;

Xue, Chunlai ;

Cheng, Buwen ;

Pan, Jisheng ;

Zhang, Zheng ;

Tok, Eng Soon ;

Antoniadis, Dimitri ;

Yeo, Yee-Chia .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (03) :339-341

[10] Silicon Surface Passivation Technology for Germanium-Tin P-Channel MOSFETs: Suppression of Germanium and Tin Segregation for Mobility Enhancement [J].

Guo, Pengfei ;

Cheng, Ran ;

Wang, Wei ;

Zhang, Zheng ;

Pan, Jisheng ;

Tok, Eng Soon ;

Yeo, Yee-Chia .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (08) :Q162-Q168

← 1 2 3 4 5 6 →