Quasiparticle Transformation during a Metal-Insulator Transition in Graphene

被引：178

作者：

Bostwick, Aaron ^{[1
]}

McChesney, Jessica L. ^{[1
]}

Emtsev, Konstantin V. ^{[2
]}

Seyller, Thomas ^{[2
]}

Horn, Karsten ^{[3
]}

Kevan, Stephen D. ^{[4
]}

Rotenberg, Eli ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

[2] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, D-91058 Erlangen, Germany

[3] Max Planck Gesell, Fritz Haber Inst, Dept Mol Phys, D-14195 Berlin, Germany

[4] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 05期

关键词：

EPITAXIAL GRAPHENE; BANDGAP;

D O I：

10.1103/PhysRevLett.103.056404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Here we show, with simultaneous transport and photoemission measurements, that the graphene-terminated SiC(0001) surface undergoes a metal-insulator transition upon dosing with small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi-liquid behavior and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state.

引用

页数：4

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