Determination of electron inelastic mean free paths for poly[methyl(phenyl)silylene] films

被引:3
作者
Zemek, J. [1 ]
Houdkova, J. [1 ]
Jiricek, P. [1 ]
Jablonski, A. [2 ]
Jurka, V. [1 ]
Kub, J. [1 ]
机构
[1] Acad Sci Czech Republic, Inst Phys, Prague 16253 6, Czech Republic
[2] Polish Acad Sci, Inst Phys Chem, PL-01224 Warsaw, Poland
关键词
Polymer physics; Poly[methyl(phenyl)silylene; Inelastic mean free path; RAY PHOTOELECTRON-SPECTROSCOPY; SURFACE EXCITATION PARAMETER; AMORPHOUS-CARBON FILMS; ANGULAR-DISTRIBUTION; ESCAPE DEPTH; POLYSILANES; POLYMERS; BACKSCATTERING; REFLECTIVITY; DENSITY;
D O I
10.1016/j.polymer.2009.03.031
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
The inelastic mean free paths (IMFPs) of electrons at a poly[methyl(phenyl)silylene] thin film surface were determined using elastic peak electron spectroscopy (EPES) and Monte Carlo calculations for a wide electron energy range, 200-1600 eV. We considered the surface composition determined from X-ray induced photoelectron spectra (XPS), the hydrogen concentration evaluated by EPES, and a correction for Surface excitations. The results compare well to those calculated from the predictive TPP-2M and G1, formulae. Calculations carried out with the quantitative structure-property relationship of Cumpson and the formula of Ashley and Williams provide larger IMFP values, and can be useful only for a rough estimation. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2445 / 2450
页数:6
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