Strain relaxation of Si0.75Ge0.25 in hydrogen-implanted Si0.75Ge0.25/B-doped Si0.70Ge0.30/Si heterostructure

被引：2

作者：

Chen, Da ^{[1
,2
]}

Xue, Zhongying ^{[2
]}

Wang, Gang ^{[1
]}

Guo, Qinglei ^{[2
]}

Liu, Linjie ^{[2
]}

Zhang, Miao ^{[2
]}

Liu, Su ^{[1
]}

Wei, Xing ^{[2
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 06期

基金：

上海市自然科学基金; 中国国家自然科学基金;

关键词：

DISLOCATION DENSITY; SI; DIFFUSION; MOBILITY; LAYERS; FILM;

D O I：

10.7567/APEX.7.061302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An approach used to obtain a high-quality strain-relaxed SiGe layer by investigating the preferential aggregation and homogenization of nanometric bubbles along the B-doped Si0.70Ge0.30 interlayer in the H-implanted Si0.75Ge0.25/B-doped Si0.70Ge0.30/Si heterostructure has been proposed. The formation of nanometric bubbles is found to be closely correlated to the B atoms doped in the buried Si0.70Ge0.30 layer. Moreover, with the B-doped ultrathin Si0.70Ge0.30 interlayer, the formed nanometric bubbles can interact with dislocation loops and eject them by gliding to the Si0.70Ge0.30/Si interface. The threading dislocation density is 3.3 x 10(5) cm(-2), which is superior to that of the sample grown with a graded buffer layer. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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