Demonstration of Detecting Small pH Changes Using High-Sensitivity Amorphous InGaZnO4 Thin-Film Transistor pH Sensor System

被引：16

作者：

Takechi, Kazushige ^{[1
]}

Iwamatsu, Shinnosuke ^{[2
]}

Konno, Shunsuke ^{[2
]}

Yahagi, Toru ^{[2
]}

Abe, Yutaka ^{[2
]}

Katoh, Mutsuto ^{[2
]}

Tanabe, Hiroshi ^{[1
]}

机构：

[1] NLT Technol Ltd, Kawasaki, Kanagawa 2120058, Japan

[2] Yamagata Res Inst Technol, Yamagata 9902473, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 02期

关键词：

Amorphous InGaZnO; high sensitivity; pH sensor; thin-film transistor; top-gate effect;

D O I：

10.1109/TED.2016.2638500

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, we discuss our top-gate-effect- basedhigh-sensitivityamorphous InGaZnO4 thin-film transistor (a-InGaZnO TFT) pH sensor system. The pH sen-sor system consists of an a-InGaZnO TFT pH sensor and a driving circuit that was designed to bring out the high-sensitivity performance of the sensor. We present a primary demonstration for the a-InGaZnO TFT pH sensor system that has the potential for accurately detecting stepwise pH changes as small as 0.02.

引用

页码：638 / 641

页数：4

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