Growth and Characterization of ZnMgS and ZnMgS/ZnSe Quantum Wells grown on GaAs (100) by Using MBE

被引：4

作者：

Bradford, C. ^{[1
]}

Moug, R. T. ^{[1
]}

Curran, A. ^{[1
]}

Thuau, D. ^{[1
]}

Warburton, R. J. ^{[1
]}

Prior, K. A. ^{[1
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

ZnMgS; PL; DCXRD; Quantum Wells; MgS; Alloy stability;

D O I：

10.3938/jkps.53.3000

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Structures containing Zn1-xMgxS have been grown lattice matched to GaAs by using molecular beam epitaxy (MBE) with ZnS as the source of S. The composition of the alloy produced has been determined using double-crystal X-ray spectroscopy and X-ray interference measurements. Both techniques indicate that 0.88 <= x <= 0.93. This result is confirmed by both secondary ion mass spectroscopy and an Auger analysis carried out on the material. These results show that the crystalline quality of the material produced is excellent and that it has been grown coherently to the GaAs substrate. Photoluminescence spectroscopy shows a high intensity emission with a narrow full width half maximum, confirming the suitability of this alloy as a high-bandgap barrier material.

引用

页码：3000 / 3003

页数：4

共 11 条

[1] Growth of zinc blende MgS/ZnSe single quantum wells by molecular-beam epitaxy using ZnS as a sulphur source [J].

Bradford, C ;

O'Donnell, CB ;

Urbaszek, B ;

Balocchi, A ;

Morhain, C ;

Prior, KA ;

Cavenett, BC .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :3929-3931

[2] Growth and characterization of MgS/CdSe self-assembled quantum dots [J].

Bradford, C ;

Urbaszek, B ;

Funato, M ;

Graham, TCM ;

McGhee, EJ ;

Warburton, RJ ;

Prior, KA ;

Cavenett, B .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :581-585

[3] Highly confined excitons in MgS/ZnSe quantum wells grown by molecular beam epitaxy [J].

Bradford, C ;

O'Donnell, CB ;

Urbaszek, B ;

Morhain, C ;

Balocchi, A ;

Prior, KA ;

Cavenett, BC .

PHYSICAL REVIEW B, 2001, 64 (19)

[4] High temperature growth of ZnS and ZnMgS by molecular beam epitaxy under high sulfur beam pressure [J].

Ichino, K ;

Ueyama, K ;

Yamamoto, M ;

Kariya, H ;

Miyata, H ;

Misasa, H ;

Kitagawa, M ;

Kobayashi, H .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4249-4253

[5] Influence of Mg content on molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors [J].

Lu, LW ;

Sou, IK ;

Ge, WK .

JOURNAL OF CRYSTAL GROWTH, 2004, 265 (1-2) :28-33

[6] MBE growth of MgS nanowires characterized using AFM [J].

Moug, R. T. ;

Bradford, C. ;

Prior, K. A. .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 :289-292

[7] Characterization of MBE grown II-VI semiconductor thin layers by X-ray interference [J].

Prior, KA ;

Tang, X ;

O'Donnell, C ;

Bradford, C ;

David, L ;

Cavenett, BC .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :565-570

[8] Molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors [J].

Sou, IK ;

Wu, MCW ;

Sun, T ;

Wong, KS ;

Wong, GKL .

APPLIED PHYSICS LETTERS, 2001, 78 (13) :1811-1813

[9] X-RAY INTERFERENCE IN ULTRATHIN EPITAXIAL LAYERS - A VERSATILE METHOD FOR THE STRUCTURAL-ANALYSIS OF SINGLE QUANTUM WELLS AND HETEROINTERFACES [J].

TAPFER, L ;

PLOOG, K .

PHYSICAL REVIEW B, 1989, 40 (14) :9802-9810

[10] MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast [J].

Tawara, T ;

Suemune, I ;

Tanaka, S .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :1019-1023

← 1 2 →