Photo-CVD process for ultra thin SiO2 films

被引：3

作者：

Sánchez, V ^{[1
]}

Munguía, J ^{[1
]}

Estrada, M ^{[1
]}

机构：

[1] CINVESTAV, Dept Ingn Elect, SEES, Mexico City 07300, DF, Mexico

来源：

MICROELECTRONICS RELIABILITY | 2004年 / 44卷 / 05期

关键词：

D O I：

10.1016/j.microrel.2004.02.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we first report the use of very low deposition rate photo-induced chemical vapor deposition process, (below 0.05 nm/min). This photo-CVD process is adequate to grow very thin and ultra thin layers Of SiO2. Details on the design of the reaction chamber, reactive gases and process parameters to obtain the desired deposition regime are presented. Dependence of deposition rate on pressure in the chamber and gas flow ratio is discussed. Deposited layers were characterized using I-V and C-V techniques. (C) 2004 Published by Elsevier Ltd.

引用

页码：885 / 888

页数：4

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