Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors

被引：12

作者：

Bergunde, T

Henninger, B

Lünenbürger, M

Heuken, M

Weyers, M

Zettler, JT

机构：

[1] Ferdinand Braun Inst, D-12489 Berlin, Germany

[2] LayTec GMBH, D-10587 Berlin, Germany

[3] Aixtron AG Aachen, D-52072 Aachen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷

关键词：

characterization; heat transfer; metalorganic vapor phase epitaxy; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(02)01856-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A procedure and set-up for high-precision determination of the true surface temperature of wafers during growth by metalorganic vapour phase epitaxy is described. The reflectance of the surface measured by an EpiRAS(R) sensor is used for correcting the signal of a pyrometer for changes in emissivity. This allows for determination of the true surface temperature with a precision of +/- 1degreesC even for multilayer structures. This high precision allows to determine differences in the temperature of wafers of different size or rotating at different speed in an Aixtron Planetary Reactor(R). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：235 / 239

页数：5