Comparison between tantalum carbosulfide and TaCl5-graphite intercalation compound by scanning tunneling microscopy

被引:3
|
作者
Walter, J [1 ]
Shioyama, H
Hara, S
机构
[1] MITI, AIST, Osaka Natl Res Inst, Ikeda, Osaka 5630875, Japan
[2] Osaka Univ, Dept Mat Sci & Proc, Suita, Osaka 5650871, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期
关键词
D O I
10.1116/1.591361
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The layered compounds of TaCl5-graphite intercalation compound, second-stage stacking sequence: C-TaCl5-C-C and tantalum carbosulfide were studied by scanning tunneling microscopy. Although both materials consist of layers the information on their content gathered by scanning tunneling microscopy is quite different for both, The: second-stage TaCl5-graphite intercalation compound provides detailed information concerning the superstructure and positions of adjacent chlorine atoms at the upper graphene layer. Tantalum carbosulfide is a layered compound with a. stacking sequence of S-Ta-C-Ta-S. Direct information from the first (sulfur) layer only could be obtained. Measured amplitudes are distinguishable for the sulfur layer, this may indicate the occurrence of charge density waves. (C) 2000 American Vacuum Society. occurrence of charge density waves. [S0734-211X(00)03203-0].
引用
收藏
页码:1203 / 1206
页数:4
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