The effect of electron pressure on suspended helium films

被引:13
作者
Valkering, A [1 ]
Klier, J [1 ]
Leiderer, P [1 ]
机构
[1] Univ Konstanz, Fak Phys, D-78457 Constance, Germany
来源
PHYSICA B | 2000年 / 284卷
关键词
2D electrons; electron pressure; suspended helium films;
D O I
10.1016/S0921-4526(99)02290-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
(Quasi-) one- and zero-dimensional electron systems can be created using a suspended helium film on a structured substrate. To investigate the relation between the curved surface and the properties of the electron system, the suspended helium film profile in a quasi-one-dimensional channel is measured interferometrically. It is shown that the film thickness decreases when the surface is charged with electrons at a density > 10(9) cm(-2). (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:172 / 173
页数:2
相关论文
共 7 条
  • [1] STABILITY OF CHARGED HE-4 FILMS
    ETZ, H
    GOMBERT, W
    IDSTEIN, W
    LEIDERER, P
    [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (27) : 2567 - 2570
  • [2] STABILITY OF TWO-DIMENSIONAL ELECTRONS ON A FRACTIONATED HELIUM SURFACE
    MARTY, D
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (30): : 6097 - 6104
  • [3] Observation of magnetoplasma resonances in a single wire of electrons on helium
    Valkering, AMC
    van der Heijden, RW
    [J]. PHYSICA B-CONDENSED MATTER, 1998, 249 : 652 - 655
  • [4] Single wire configuration of electrons on a suspended helium film
    Valkering, AMC
    Sommerfeld, PKH
    Richardson, PJ
    vanderHeijden, RW
    deWaele, ATAM
    [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1996, 46 : 321 - 322
  • [5] Imaging of a suspended helium film with 2-D electrons by interferometry
    Valkering, AMC
    Klier, J
    Teske, E
    van der Heijden, RW
    Leiderer, P
    [J]. JOURNAL OF LOW TEMPERATURE PHYSICS, 1998, 113 (5-6) : 1115 - 1120
  • [6] VOLODIN AP, 1977, JETP LETT+, V26, P543
  • [7] CHARGE-INDUCED RIPPLON SOFTENING AND DIMPLE CRYSTALLIZATION AT THE INTERFACE OF HE-3 HE-4 MIXTURES
    WANNER, M
    LEIDERER, P
    [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (05) : 315 - 317